six igbtmod? nf-series module 75 amperes/600 volts CM75TL-12NF powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 1 10/10 rev. 1 description: powerex igbtmod? modules are designed for use in switching applications. each module consists of six igbt transistors in a three phase bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low drive power low v ce(sat) discrete super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: ac motor control motion/servo control ups photovoltaic/fuel cell ordering information: example: select the complete module number you desire from the table below -i.e. CM75TL-12NF is a 600v (v ces ), 75 ampere six- igbtmod? power module. type current rating v ces amperes volts (x 50) cm 75 12 dimensions inches millimeters a 4.72 120.0 b 2.17 55.0 c 1.39 35.0 d 4.170.02 106.00.5 e 0.43 11.0 f 0.28 7.0 g 0.54 13.62 h 1.61 40.78 j 0.67 17.0 k 0.47 12.0 l m5 m5 m 0.22 dia. dia. 5.5 dimensions inches millimeters n 1.23 32.0 p 0.47 11.75 q 0.53 13.5 r 0.91 23.0 s 0.87 22.0 t 0.76 19.75 u 0.42 10.75 v 0.87+0.04/-0.02 22.0+1.0/-0.5 w 0.91 23.2 x 0.63 16.0 y 0.12 3.0 outline drawing and circuit diagram a e d h j g j f c v l m n w x b k k k q y p k k k k s r t u r r 8 1 1 1 1 p nc nc nc b up-1 up-2 cn-5 cn-6 u vp-1 vp-2 cn-3 cn-4 v wp-1 wp-2 cn-1 cn-2 w cn-7 cn-8 n aa cn up vp wp n p b u v w ab housing types (j.s.t. mfg. co. ltd.) aa C b8p-vh-fb-b ab C b2p-vh-fb-b
CM75TL-12NF six igbtmod? nf-series module 75 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 2 10/10 rev. 1 absolute maximum ratings, t j = 25c unless otherwise specifed characteristics symbol CM75TL-12NF units power device junction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c collector-emitter voltage (g-e short) v ces 600 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 102c)* i c 75 amperes peak collector current (tj 150c) i cm 150** amperes emitter current*** i e 75 amperes peak emitter current*** i em 150** amperes maximum collector dissipation (t c = 25c, t j < 150c) p c 430 watts mounting torque, m5 mounting screws 31 in-lb mounting torque, m5 main terminal screws 31 in-lb module weight (typical) 350 grams isolation voltage, ac 1 minute, 60hz sinusoidal v iso 2500 volts electrical and mechanical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate-emitter threshold voltage v ge(th) i c = 7.5ma, v ce = 10v 6 7 8 volts gate leakage current i ges v ge = v ges , v ce = 0v 0.5 a collector-emitter saturation voltage v ce(sat) i c = 75a, v ge = 15v, t j = 25c 1.7 2.2 volts i c = 75a, v ge = 15v, t j = 125c 1.7 volts input capacitance c ies 11.3 nf output capacitance c oes v ce = 10v, v ge = 0v 1.4 nf reverse transfer capacitance c res 0.45 nf total gate charge q g v cc = 300v, i c = 75a, v ge = 15v 300 nc inductive turn-on delay time t d(on) 120 ns load turn-on rise time t r v cc = 300v, i c = 75a, 100 ns switch turn-off delay time t d(off) v ge1 = v ge2 = 15v, 300 ns time turn-off fall time t f r g = 8.3 , i e = 75a, 300 ns reverse recovery time*** t rr inductive load switching operation 100 ns reverse recovery charge*** qrr 1.2 c emitter-collector voltage*** v ec i e = 75a, v ge = 0v 2.8 volts *t c , t f measured point is just under the chips. **pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. ***represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi).
CM75TL-12NF six igbtmod? nf-series module 75 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 3 10/10 rev. 1 thermal and mechanical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case* r th(j-c) q per igbt 1/6 module 0.29 c/w thermal resistance, junction to case* r th(j-c) d per fwdi 1/6 module 0.51 c/w contact thermal resistance r th(c-f) per 1/6 module, thermal grease applied 0.085 c/w external gate resistance r g 8.3 83 *t c , t f measured point is just under the chips. collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 10 2 10 1 10 0 10 -1 10 1 0 1 3 4 2 5 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 2 10 3 emitter current, i e , (amperes) gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 6 8 10 14 12 16 18 20 8 6 4 2 0 t j = 25c t j = 25c t j = 125c v ge = 0v c ies c oes c res i c = 150a i c = 75a i c = 30a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0 2 4 6 8 10 0 v ge = 20v 10 11 12 13 15 9 8 t j = 25 c 150 50 100 collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 4 3 0 2 1 0 150 50 100 v ge = 15v t j = 25c t j = 125c 10 -1 collector current, i c , (amperes) 10 3 10 0 10 1 10 2 10 0 10 1 switching time, (ns) half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 300v v ge = 15v r g = 8.3? t j = 125c inductive load t f 10 2
CM75TL-12NF six igbtmod? nf-series module 75 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 4 10/10 rev. 1 time, (s) transient thermal impedance characteristics (igbt & fwdi) 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 0.29c/w (igbt) r th(j-c) = 0.51c/w (fwdi) normalized transient thermal impedance, z th(j-c') gate resistance, r g , (?) switching loss, e sw(on) , e sw(off) , (mj/pulse) 10 2 10 0 10 1 10 1 10 0 v cc = 300v v ge = 15v i c = 75a t j = 125c inductive load c snubber at bus 10 2 switching loss vs. gate resistance (typical) e sw(on) e sw(off) gate resistance, r g , (?) reverse recovery switching loss, e rr , (mj/pulse) 10 0 10 0 10 1 10 -1 10 -2 v cc = 300v v ge = 15v i e = 75a t j = 125c inductive load c snubber at bus 10 2 reverse recovery switching loss vs. gate resistance (typical) emitter current, i e , (amperes) reverse recovery switching loss, e rr , (mj/pulse) 10 0 10 0 10 1 10 -1 10 -2 v cc = 300v v ge = 15v r g = 8.3? t j = 125c inductive load c snubber at bus 10 2 reverse recovery switching loss vs. emitter current (typical) e rr e rr gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge vs. v ge 20 0 16 12 8 4 0 100 200 300 500 400 v cc = 300v v cc = 200v i c = 75a emitter current, i e , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 3 10 0 10 1 10 2 10 1 10 3 10 2 10 1 reverse recovery current, i rr , (amperes) 10 2 v cc = 300v v ge = 15v r g = 8.3? t j = 25c inductive load i rr t rr collector current, i c , (amperes) switching loss, e sw(on) , e sw(off) , (mj/pulse) 10 1 10 0 10 1 10 0 10 -1 v cc = 300v v ge = 15v r g = 8.3? t j = 125c inductive load c snubber at bus 10 2 switching loss vs. collector current (typical) e sw(on) e sw(off)
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